Effect of nitrogen on band alignment in HfSiON gate dielectrics

Applied Physics Letters

Volumn 87, Issue 21, 2005, Pages 1-3

  Sayan, S ^a   Nguyen, N V ^a   Ehrstein, J ^a   Chambers, J J ^b   Visokay, M R ^b   Quevedo Lopez, M A ^b   Colombo, L ^b   Yoder, D ^a   Levin, I ^a   Fischer, D A ^a   Paunescu, M ^c   Celik, O ^c   Garfunkel, E ^c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENT; BARRIER HEIGHTS; GATE DIELECTRICS; INTERDIFFUSION;

CRYSTALLIZATION; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC RESISTANCE; ELLIPSOMETRY; NITROGEN; SPECTROSCOPIC ANALYSIS; X RAY ANALYSIS;

HAFNIUM COMPOUNDS;

EID: 27844598939     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2135390     Document Type: Article

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