Correlation between processing and properties of TiO x N y thin films sputter deposited by the reactive gas pulsing technique

Applied Surface Science

Volumn 185, Issue 1-2, 2001, Pages 123-133

  Martin, N ^a   Banakh, O ^b   Santo, A M E ^b   Springer, S ^b   Sanjines R ^b   Takadoum, J ^a   Levy F ^b  

^a Centre National de la Recherche Scientifique   (France)

^b EPFL   (Switzerland)

Author keywords

Reactive gas pulsing; Reactive sputtering; Thin films; Titanium oxynitride

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; MAGNETRON SPUTTERING; MASS SPECTROMETRY; METALLOIDS; SPUTTER DEPOSITION; SURFACE REACTIONS; TITANIUM NITRIDE;

REACTIVE GAS PULSING; SURFACE POISONING;

THIN FILMS;

EID: 0035965965     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00774-7     Document Type: Article

References (33)