Nitrogen bonding, stability, and transport in AION films on Si

Applied Physics Letters

Volumn 84, Issue 24, 2004, Pages 4992-4994

  Soares, G V ^a   Bastos, K P ^a   Pezzi, R P ^a   Miotti, L ^a   Driemeier, C ^a   Baumvol, I J R ^b   Hinkle, C ^c   Lucovsky, G ^c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOW-ENERGY ION SCATTERING; NITROGEN BONDING; THERMAL PROCESSING;

ANNEALING; BONDING; CURRENT DENSITY; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; NITRIDING; NITROGEN; OXIDATION; OXYGEN; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM COMPOUNDS;

EID: 3042856269     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1763230     Document Type: Article

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