Intriguing conducting properties of HfOxNy thin films prepared from the Hf[N(C2H5)2]4

Applied Physics Letters

Volumn 89, Issue 25, 2006, Pages

  Chou, Yi Hsuan ^a   Chiu, Hsin Tien ^a   Kuo, Teng Fang ^b   Chi, Cheng Chung ^b   Chuang, Shiow Huey ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC CONDUCTIVITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; RAPID THERMAL ANNEALING; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTING PROPERTIES; HAFNIUM NITRIDE FILMS; METAL OXIDE SEMICONDUCTOR TRANSISTORS;

HAFNIUM COMPOUNDS;

EID: 33845940083     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2405848     Document Type: Article

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