Preparation of hafnium oxide films from oxygen-free Hf[N(C 2 H 5 ) 2 ] 4 precursor and their properties

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 296-301

  Takahashi, Kenji ^a   Nakayama, Makoto ^a   Yokoyama, Shintaro ^a   Kimura, Takeshi ^a   Tokumitsu, Eisuke ^a,b   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Hafnium oxide; High dielectric constant

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INTERFACES (MATERIALS); OXYGEN; PERMITTIVITY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

PRECURSORS;

HAFNIUM COMPOUNDS;

EID: 0038345961     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00435-5     Document Type: Conference Paper

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