Characteristics of LaAlO3 gate dielectrics on Si grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3540-3542

  Li, Ai Dong ^a   Shao, Qi Yue ^a   Ling, Hui Qin ^a   Cheng, Jin Bo ^a   Wu, Di ^a   Liu, Zhi Guo ^a   Ming, Nai Ben ^a   Wang, Cathy ^b   Zhou, Hong Wei ^b   Nguyen, Bich Yen ^b  

^a NANJING UNIVERSITY   (China)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DIELECTRIC FILMS; ENERGY GAP; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL LAYERS;

LANTHANUM COMPOUNDS;

EID: 0242415147     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622794     Document Type: Article

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