Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO

Applied Physics Letters

Volumn 83, Issue 13, 2003, Pages 2638-2640

  Lee, M ^a   Lu, Z H ^a   Ng, W T ^a   Landheer, D ^b   Wu, X ^b   Moisa, S ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTALLIZATION; DEPOSITION; DIFFUSION; HAFNIUM COMPOUNDS; NITROGEN OXIDES; OXYGEN; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL GROWTH;

DIELECTRIC FILMS;

EID: 0142089016     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1608488     Document Type: Article

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