Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 19, Issue 1, 2001, Pages 192-199

  Cho, M H ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; EVAPORATION; FILM GROWTH; MORPHOLOGY; OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; TEMPERATURE; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY; HIGHER BREAKDOWN FIELD STRENGTH; ION ASSISTED EVAPORATION;

OXIDE SUPERCONDUCTORS;

EID: 0035101132     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1331296     Document Type: Article

References (2)

1. L. Manchanda and M. Gurvitch, IEEE Electron Device Lett. 9, 180 (1988).
2. C. Hu, Tech. Dig. Int. Electron Devices Meet. p. 368 (1985).