Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process

IEEE Electron Device Letters

Volumn 23, Issue 7, 2002, Pages 389-391

  Chang, Tzu Yun ^b   Lei, Tan Fu ^a,b   Chao, Tien Sheng ^a,b,c   Wen, Huang Chun ^b   Chen, Hsiao Wei ^b  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Low temperature oxide; Metal gate; N2O CF4 plasma; TDDB and GOI

Indexed keywords

BINDING ENERGY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; GATES (TRANSISTOR); LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; OXIDES; PHOTOLITHOGRAPHY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

CARBON TETRAFLUORIDE PRETREATMENT; GATE OXIDE INTEGRITY; TIME DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC DEVICES;

EID: 0036645822     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1015208     Document Type: Article

References (8)

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