Thermal stability and electrical properties of pulsed laser deposited Hf-aluminate thin films for high-k: Gate dielectric applications

Journal of Physics D: Applied Physics

Volumn 38, Issue 3, 2005, Pages 446-450

  Zhu, J ^a   Liu, Z G ^b   Li, Y R ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIFFERENTIAL THERMAL ANALYSIS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; PULSED LASER DEPOSITION; THERMODYNAMIC STABILITY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC APPLICATIONS; DIELECTRIC LOSS; ROOM TEMPERATURE; TETRAGONAL STRUCTURES;

DIELECTRIC PROPERTIES;

EID: 13844257006     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/3/014     Document Type: Article

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