Recent progress in high resolution lithography

Polymers for Advanced Technologies

Volumn 17, Issue 2, 2006, Pages 94-103

  Bratton, Daniel ^a   Yang, Da ^a   Dai, Junyan ^a   Ober, Christopher K ^a  

^a Cornell University   (United States)

Author keywords

Block copolymers; Extreme ultraviolet (EUV); Lithography; Molecular glass; Nanotechnology

Indexed keywords

BLOCK COPOLYMERS; MICROELECTRONICS; NANOTECHNOLOGY; SELF ASSEMBLY; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET (EUV); HIGH RESOLUTION LITHOGRAPHY; MOLECULAR GLASS;

PHOTOLITHOGRAPHY;

BLOCK COPOLYMERS; MICROELECTRONICS; NANOTECHNOLOGY; PHOTOLITHOGRAPHY; SELF ASSEMBLY; ULTRAVIOLET RADIATION;

COPOLYMER; NANOTECHNOLOGY;

EID: 33644927550     PISSN: 10427147     EISSN: 10991581     Source Type: Journal    
DOI: 10.1002/pat.662     Document Type: Review

References (102)

1. Gates BD, Xu Q, Love JC, Wolfe DB, Whitesides GM. Unconventional nanofabrication. Ann. Rev. Mater. Res. 2004; 15:339-372.
2. Gates BD, Xu Q, Stewart M, Ryan D, Willson CG, Whitesides GM. New approaches to nanofabrication: Molding, printing, and other techniques. Chem. Rev. 2005; 105: 1171-1196.
3. Kawata H, Carter JM, Yen A, Smith HI. Optical projection lithography using lenses with numerical apertures greater then unity. Microelec. Eng. 1989; 9: 31-36.
4. Hinsberg WD, Hoffnagle JA, Wallraff GM, Larson CE, Houle FA, Sundberg L, Truong HD, Davis BW, Allen RD. Evaluation of functional properties of imaging materials for water immersion lithography. Proc. SPIE - Int. Soc. Opt. Eng. 2005; 5753: 508-518.
5. Allen RD, Brock PJ, Sundberg L, Larson CE, Wallraff GM, Hinsberg WD, Meute J, Shimokawa T, Chiba T, Slezak M. Design of protective topcoats for immersion lithography. J. Photopolym. Sci. Technol. 2005; 18: 615-619.
6. Dammel RR, Houlihan FM, Sakamuri R, Rentkiewicz D, Romano A. 193 nm Immersion lithography - Taking the plunge. J. Photopolym. Sci. Technol. 2004; 17: 587-602.
7. Brainard RL, Henderson C, Cobb J, Rao V, Mackevich JF, Okoroanyanwu U, Gunn S, Chambers J, Connolly S. Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation. J. Vac. Sci. Technol., B: Microelectronics and Nanometer Structures 1999; 17: 3384-3389.
8. Brainard RL, Barclay GG, Anderson EH, Ocola LE. Resists for next generation lithography. Microelec. Eng. 2002; 62: 707-715.
9. Brainard RL, Cobb J, Cutler CA. Current status of EUV photoresists. J. Photopolym. Sci. Technol. 2003; 16: 401-410.
10. Cao HB, Roberts JM, Dalin J, Chandhok M, Meagley RP, Panning EM, Shell MK, Rice BJ. Intel's EUV resist development. Proc. SPIE - Int. Soc. Opt. Eng. 2003; 5039: 484-491.
11. Cobb JL, Dentinger PM, Hunter LL, O'Connell DJ, Gallatin GM, Hinsberg WD, Houle FA, Sanchez MI, Domke WD, Wurm S, Okoroanyanwu U, Lee SH. EUV photoresist performance results from the VNL and the EUV LLC. Proc. SPIE - Int. Soc. Opt. Eng. 2002; 4688: 412-420.
12. Cobb JL, Brainard RL, O'Connell DJ, Dentinger PM. EUV lithography: patterning to the end of the road. Mater. Res. Soc. Symp. Proc. 2002; 705: 91-100.
13. He D, Solak H, Li W, Cerrina F. Extreme ultraviolet and x-ray resist: Comparison study. J. Vac. Sci. Technol., B: Microelectronics and Nanometer Structures 1999; 17: 3379-3383.
14. Hamamoto K, Watanabe T, Hada H, Komano, H, Kinoshita H. Characteristics of CA resist in EUV lithography. J. Photopolym. Sci. Technol. 2002; 15: 361-366.
15. Lu B, Weisbrod E, Mangat PJS, Nordquist KJ, Ainley ES. Evaluation of a high-performance chemically amplified resist for EUVL mask fabrication. Proc. SPIE - Int. Soc. Opt. Eng. 2003; 5037: 952-961.
16. Cerrina F, Bollepalli S, Khan M, Solak H, Li W, He D. Image formation in EUV lithography: multilayer and resist properties. Microelec. Eng. 2000; 53: 13-20.
17. Solak HH, He D, Li W, Cerrina F, Sohn BH, Yang XM, Nealey PF. EUV interferometric lithography for resist characterization. Proc. SPIE - Int. Soc. Opt. Eng. 1999; 3676: 278-282.
18. Solak HH, He D, Li W, Cerrina F. Nanolithography using extreme ultraviolet lithography interferometry: 19 nm lines and spaces. J. Vac. Sci. Technol., B: Microelectronics and Nanometer Structures 1999; 17: 3052-3057.
19. Solak HH, David C, Gobrecht J, Golovkina V, Cerrina F, Kim SO, Nealey PF. Sub-50 nm period patterns with EUV interference lithography. Microelec. Eng. 2003; 68: 56-62.
20. Seligson D, Pan L, King P, Pianetta P. Soft x-ray dosimetry and its application on the lithography beamline at SSRL. Nucl. Instr. Meth. Phys. Res., A: Accelerators, Spectrometers, Detectors, and Associated Equipment 1988; A266: 612-618.
21. Irie S, Endo M, Sasago M, Kandaka N, Kondo H, Murakami K. Study of transmittance of polymers and influence of photoacid generator on resist transmittance at extreme ultraviolet wavelength. Jpn J. Appl. Phys., Part 1: Regular Papers, Short Notes & Review Papers 2002; 41: 5864-5867.
22. Matsuzawa NN, Irie S, Yano E, Okazaki S, Ishitani A. Theoretical calculations of photoabsorption of polymers in the EUV (extreme ultraviolet) region. Proc. SPIE - Int. Soc. Opt. Eng. 2001; 4343: 278-284.
23. Matsuzawa NN, Oizumi H, Mori S, Irie S, Shirayone S, Yano E, Okazaki S, Ishitani A, Dixon DA. Theoretical calculation of photoabsorption of various polymers in an extreme ultraviolet region. Jpn J. Appl. Phys., Part 1: Regular Papers, Short Notes & Review Papers 1999; 38: 7109-7113.
24. Matsuzawa NN, Oizumi H, Mori S, Irie S, Yano E, Okazaki S, Ishitani A. Theoretical estimation of absorption coefficients of various polymers at 13 nm. Microelec. Eng. 2000; 53: 671-674.
25. Wood OR II, Bjorkholm JE, Dreyer KF, Fetter L, Himel MD, Freeman RR, Tennant DM, Griffith JE, Taylor GN. Experiments and simulations of EUV lithographic resist patterning at wavelengths from 7 to 40nm. OSA Proc. Extreme Ultraviolet Lithogr., Proc. Top. 1995; 83-88.
26. Ryoo M, Shirayone S, Oizumi H, Matsuzawa NN, Irie S, Yano E, Okazaki S. Control of line edge roughness of ultrathin resist films subjected to EUV exposure. Proc. SPIE - Int. Soc. Opt. Eng. 2001; 4345: 903-911.
27. Taylor GN, Hutton RS, Stein SM, Boyce CH, Wood OR II, LaFontaine B, MacDowell AA, Wheeler DR, Kubiak GD. Extreme UV resist technology: the limits of silylated resist resolution. Proc. SPIE - Int. Soc. Opt. Eng. 1995; 2437: 308-330.
28. Wheeler D, Hutton R, Boyce C, Stein S, Cirelli R, Taylor G. Aminodisilanes as silylating agents for dry-developed positive-tone resists for deep ultraviolet (248 nm) and extreme ultraviolet (13.5 nm) microlithography. Proc. SPIE - Int. Soc. Opt. Eng. 1995; 2438: 762-774.
29. Cutler CA, Mackevich JF, Li J, O'Connell DJ, Cardinale GF, Brainard RL. Effect of polymer molecular weight on AFM polymer aggregate size and LER of EUV resists. Proc. SPIE - Int. Soc. Opt. Eng. 2003; 5037: 406-417.
30. Dentinger PM, Hunter LL, O'Connell DJ, Gunn S, Goods D, Fedynyshyn TH, Goodman RB, Astolfi DK. Photospeed considerations for extreme ultraviolet lithography resists. J. Vac. Sci. Technol., B: Microelectronics and Nanometer Structures 2002; 20: 2962-2967.
31. Ray-Chaudhuri A, Kubiak G, Henderson C, Wheeler D, Pollagi T. Top-surface Imaging Resists for Lithography with Strongly Attenuated Radiation. Advanced Electronics Manufacturing Department: Sandia National Laboratories Albuquerque, NM, 1997; 1-13.
32. Henderson C, Wheeler D, Pollagi T, Cardinale G, O'Connell D, Fisher A, Rao V, Goldsmith J. Top surface imaging for extreme ultraviolet lithography. J. Photopolym. Sci. Technol. 1998; 11: 459-464.
33. Scheckler EW, Ogawa T, Yamanashi H, Soga T, Ito M. Resist pattern fluctuation limits in extreme-ultraviolet lithography. J. Vac. Sci. Technol., B: Microelectronics and Nanometer Structures 1994; 12: 2361-2371.
34. Taylor GN, Hutton RS, Stein SM, Katz HE, Schilling ML, Putvinski TM. Self-assembly: its use in at-the-surface imaging schemes for microstructure fabrication in resist films. Microelec. Eng. 1994; 23: 259-262.
35. Dai J, Ober CK, Wang L, Cerrina F, Nealey PF. Organoelement resists for EUV lithography. Proc. SPIE - Int. Soc. Opt. Eng. 2002; 4690: 1193-1202.
36. Kessel CR, Boardman LD, Rhyner SJ, Cobb JL, Henderson CC, Rao V, Okoroanyanwu U. Novel silicon-containing resists for EUV and 193-nm lithography. Proc. SPIE - Int. Soc. Opt. Eng. 1999; 3678: 214-220.
37. Kwark YJ, Bravo-Vasquez JP, Ober CK, Cao HB, Deng H, Meagley RP. Novel silicon-containing polymers as photoresist materials for EUV lithography. Proc. SPIE - Int. Soc. Opt. Eng. 2003; 5039: 1204-1211.
38. Dai J, Ober CK, Kim SO, Nealey PF, Golovkina V, Shin J, Wang L, Cerrina F. Synthesis and evaluation of novel organo-element resists for EUV lithography. Proc. SPIE - Int. Soc. Opt. Eng. 2003; 5039: 1164-1172.
39. Wood OR II, Bjorkholm JE, Fetter L, Himel MD, Tennant DM, MacDowell AA, La Fontaine B, Griffith JE, Taylor GN. Wavelength dependence of the resist sidewall angle in extreme ultraviolet lithography. J. Vac. Sci. Technol., B: Microelectronics and Nanometer Structures 1994; 12: 3841-3845.
40. Henderson C, Wheeler D, Pollagi T, O'Connell D, Goldsmith J, Fisher A, Cardinale G, Hutchinson J, Rao V. Top surface imaging resists for EUV lithography. Proc. SPIE - Int. Soc. Opt. Eng. 1998; 3331: 32-40.
41. Irie S, Shirayone S, Mori S, Oizumi H, Matsuzawa N, Yano E, Okazaki S, Watanabe T, Kinoshita H. Development of resist materials for EUVL. J. Photopolym. Sci. Technol. 2000; 13: 385-390.
42. Irie S, Oizumi H, Nishiyama I, Shirayone S, Ryoo M, Yamanashi H, Yano E, Okazaki S. Evaluation of the outgassing from resists at the EUV wavelength. J. Photopolym. Sci. Technol. 2001; 14: 561-566.
43. Rao V, Cobb JL, Henderson CC, Okoroanyanwu U, Bozman DR, Mangat PJS, Brainard RL, Mackevich J. Ultrathin photoresists for EUV lithography. Proc. SPIE - Int. Soc. Opt. Eng. 1999; 3676: 615-626.
44. Mori S, Morisawa T, Matsuzawa N, Kaimoto Y, Endo M, Matsuo T, Kuhara K, Sasago M. Reduction of line edge roughness in the top surface imaging process. J. Vac. Sci. Technol., B: Microelectronics and Nanometer Structures 1998; 16: 3739-3743.
45. Seki S, Sakurai Y, Maeda K, Kunimi Y, Nagahara S, Tagawa S. Reaction mechanisms in silicon-based resist materials: polysilanes for deep-UV, EUV, and x-ray lithography. Proc. SPIE - Int. Soc. Opt. Eng. 2000; 3999: 423-430.
46. Seki S, Sakurai Y, Maeda K, Kunimi Y, Tagawa S. Negative resist material based on polysilanes for electron beam and x-ray lithographies. Jpn J. Appl. Phys., Part 1: Regular Papers, Short Notes & Review Papers 2000; 39: 4225-4230.
47. Oizumi H, Yamashita Y, Ogawa T, Ohtani M. Wetsilylation process for x-ray and EUV lithographies. J. Photopolym. Sci. Technol. 1996; 9: 627-635.
48. Oizumi H, Yamashita Y, Ohtani M. Broad-band extreme ultraviolet lithography with a wet-silylated and dry-developed resist. Microelec. Eng. 1996; 30: 291-294.
49. Postnikov SV, Somervell MH, Henderson CL, Katz S, Willson CG, Byers J, Qin A, Lin Q. Top surface imaging through silylation. Proc. SPIE - Int. Soc. Opt. Eng. 1998; 3333: 997-1008.
50. Sezi R, Sebald M, Leuschner R. Silicon-containing photoresists for half-micron lithography. Polym Eng. Sci. 1989; 29: 891-894.
51. Shirota Y. Photo- and electroactive amorphous molecular materials - molecular design, syntheses, reactions, properties, and applications. J. Mater. Chem. 2005; 15: 75-93.
52. Kadota T, Kageyama H, Wakaya F, Gamo K, Shirota Y. Amorphous molecular materials: Development of novel negative electron-beam molecular resists. Mater. Sci. Eng., C: Biomimetic and Supramolecular Systems 2001; C16: 91-94.
53. Yoshiiwa M, Kageyama H, Shirota Y, Wakaya F, Gamo K, Takai M. Novel class of low molecular-weight organic resists for nanometer lithography. Appl. Phys. Lett. 1996; 69: 2605-2607.
54. Yoshiiwa M, Kageyama H, Wakaya F, Takai M, Gamo K, Shirota Y. 1,3,5-Tris[4-(tert-butoxycarbonylmethoxy)phenyl]benzene as a novel electron-beam positive resist for nanometer lithography. J. Photopolym. Sci. Technol. 1996; 9: 57-58.
55. Kadota T, Kageyama H, Wakaya F, Gamo K, Shirota Y. Novel electron-beam molecular resists with high resolution and high sensitivity for nanometer lithography. Chem. Lett. 2004; 33: 706-707.
56. Fujita J, Ohnishi Y, Ochiai Y, Matsui S. Ultrahigh resolution of calixarene negative resist in electron beam lithography. Appl. Phys. Lett. 1996; 68: 1297-1299.
57. Nakayama T, Haga K, Haba O, Ueda M. A negative-working alkaline developable photoresist based on calix[4]resorcinarene, a crosslinker, and a photoacid generator. Chem. Lett. 1997; 3: 265-266.
58. Ishida M, Fujita JI, Ogura T, Ochiai Y, Ohshima E, Momoda J. Sub-10-nm-scale lithography using pchloromethyl-methoxy-calix[4]arene resist. Jpn J. Appl. Phys., Part 1: Regular Papers, Short Notes & Review Papers 2003; 42: 3913-3916.
59. Nakayama T, Ueda M. A new positive-type photoresist based on mono-substituted hydroquinone calix[8]arene and diazonaphthoquinone. J. Mater. Chem. 1999; 9: 697-702.
60. Ober CK, Kwark YJ, Bravo JP, Dai J, Hamad AH. New Strategies for Lithography at Short Wavelengths, abstracts of papers, 227th ACS National Meeting, Anaheim, CA, 2004; PMSE-014.
61. Tsuchiya K, Chang SW, Felix NM, Ueda M, Ober CK. Lithography based on molecular glasses. J. Photopolym. Sci. Technol. 2005; 18: 431-434.
62. Chang SW, Felix N, Yang D, Ramakrishnan A, Ober CK. Lithography based on calix[4]resorcinarene and related molecular glasses. PMSE Preprints 2005; 92: 131-132.
63. Chang SW, Yang D, Dai J, Felix N, Bratton D, Tsuchiya K, Kwark YJ, Bravo-Vasquez JP, Ober CK, Cao HB, Deng H. Mater future lithography. Proc. SPIE - Int. Soc. Opt. Eng. 2005: 5753: 1-9.
64. Sooriyakumaran R, Truong H, Sundberg L, Morris M, Hinsberg B, Ito H, Allen R, Huang WS, Goldfarb D, Burns S, Pfeiffer D. Molecular resists based on polyhedral oligomeric silsesquioxanes (POSS). Proc. SPIE - Int. Soc. Opt. Eng. 2005; 5753: 329-337.
65. Sooriyakumaran R, Truong H, Sundberg L, Morris M, Hinsberg B, Ito H, Allen R, Huang WS, Goldfarb D, Burns S, Pfeiffer D. Positive resists based on non-polymeric macromolecules. J. Photopolym. Sci. Technol. 2005: 18: 425-429.
66. Kim JB, Oh T-H, Kim K. Nanomolecular resists with adamantane core for 193-nm lithography. Proc. SPIE - Int. Soc. Opt. Eng. 2005; 5753: 603-610.
67. Craighead HG. Nanoelectromechanical systems. Science 2000; 290: 1532-1535.
68. Wu H, Odom TW, Chiu DT, Whitesides GM. Fabrication of complex three-dimensional microchannel systems in PDMS. J. Am. Chem. Soc. 2003; 125: 554-559.
69. Vlasov YA, Bo XZ, Sturm JC, Norris DJ. On-chip natural assembly of silicon photonic bandgap crystals. Nature 2001; 414: 289-293.
70. Parthenopoulos DA, Rentzepis PM. Three-dimensional optical storage memory. Science 1989; 245: 843-845.
71. Pudavar HE, Joshi MP, Prasad PN, Reinhardt BA. High-density three-dimensional optical data storage in a stacked compact disk format with two-photon writing and single photon readout. Appl. Phys. Lett. 1999; 74: 1338-1340.
72. Horiyama M, Sun HB, Miwa M, Matsuo S, Misawa H. Three-dimensional microstructures created by laser microfabrication technology. Jpn J. Appl. Phys., Part 2: Letters 1999; 38: L212-L215.
73. Maruo S, Ikuta K. Three-dimensional microfabrication by use of single-photon-absorbed polymerization. Appl. Phys. Lett. 2000; 76: 2656-2658.
74. Maruo S, Kawata S. Two-photon-absorbed near-infrared photopolymerization for three-dimensional microfabrication. J. Microelectromechanical Systems 1998; 7: 411-415.
75. Sun HB, Kawakami T, Xu Y, Ye JY, Matuso S, Misawa H, Miwa M, Kaneko R. Real three-dimensional microstructures fabricated by photopolymerization of resins through two-photon absorption. Opt. Lett. 2000; 25(15): 1110-1112.
76. Sun HB, Matsuo S, Misawa H. Three-dimensional photonic crystal structures achieved with two-photon-absorption photopolymerization of resin. Appl. Phys. Lett. 1999; 74: 786-788.
77. Cumpston BH, Ananthavel SP, Barlow S, Dyer DL, Ehrlich JE, Erskine LL, Heikal AA, Kuebler SM, Lee YS, McCord-Maughon D, Qin J, Rockel H, Rumi M, Wu XL, Marder SR, Perry JW. Two-photon polymerization initiators for three-dimensional optical data storage and microfabrication. Nature 1999; 398: 51-54.
78. Kawata S, Sun H-B, Tianaka T, Takada K. Finer features for functional microdevices. Nature 2001; 412: 697-698.
79. Zhou W, Kuebler SM, Braun KL, Yu T, Cammack JK, Ober CK, Perry JW, Marder SR. An efficient two-photon-generated photoacid applied to positive-tone 3D microfabrication. Science 2002; 296: 1106-1109.
80. Yu T, Ober CK, Kuebler SM, Zhou W, Marder SR, Perry JW. Chemically amplified positive resists for two-photon three-dimensional microfabrication. Adv. Mater. 2003; 15: 517-521.
81. Tormen M, Businaro L, Altissimo M, Romanato F, Cabrini S, Perennes F, Proietti R, Sun HB, Kawata S, Di Fabrizio E. 3D patterning by means of nanoimprinting, X-ray and two-photon lithography. Microelec. Eng. 2004; 774: 535-541.
82. Colburn M, Johnson S, Stewart M, Damle S, Bailey TC, Choi B, Wedlake M, Michaelson T, Sreenivasan SV, Ekerdt J, Willson CG. Step and flash imprint lithography: a new approach to high-resolution patterning. Proc. SPIE - Int. Soc. Opt. Eng. 1999; 3676: 379-389.
83. Resnick DJ, Dauksher WJ, Mancini D, Nordquist KJ, Bailey TC, Johnson S, Stacey N, Ekerdt JG, Willson CG, Sreenivasan SV, Schumaker N. Imprint lithography for integrated circuit fabrication. J. Vac. Sci. Technol., B: Microelectronics and Nanometer Structures - Processing, Measurement, and Phenomena 2003; 21: 2624-2631.
84. Colburn M, Suez I, Choi BJ, Meissl M, Bailey T, Sreenivasan SV, Ekerdt JG, Willson CG. Characterization and modeling of volumetric and mechanical properties for step and flash imprint lithography photopolymers. J. Vac. Sci. Technol., B: Microelectronics and Nanometer Structures 2001; 19: 2685-2689.
85. Resnick DJ, Dauksher WJ, Mancini DP, Nordquist KJ, Bailey TC, Johnson SC, Stacey NA, Ekerdt JG, Willson CG, Sreenivasan SV, Schumaker NE. Imprint lithography: lab curiosity or the real NGL. Proc. SPIE - Int. Soc. Opt. Eng. 2003; 5037: 12-23.
86. Smith BJ, Stacey NA, Donnelly JP, Onsongo DM, Bailey TC, Mackay CJ, Resnick DJ, Dauksher WJ, Mancini DP, Nordquist KJ, Sreenivasan SV, Banerjee SK, Ekerdt JG, Willson CG. Employing step-and-flash imprint lithography for gate-level patterning of a MOSFET device. Proc. SPIE - Int. Soc. Opt. Eng. 2003; 5037: 1029-1034.
87. Bailey TC, Johnson SC, Sreenivasan SV, Ekerdt JG, Willson CG, Resnick DJ. Step and flash imprint lithography: an efficient nanoscale printing technology. J. Photopolym. Sci. Technol. 2002; 15: 481-486.
88. Colburn M, Grot A, Amistoso MN, Choi BJ, Bailey TC, Ekerdt JG, Sreenivasan SV, Hollenhorst J, Willson CG. Step and flash imprint lithography for sub-100-nm patterning. Proc. SPIE - Int. Soc. Opt. Eng. 2000; 3997: 453-457.
89. Ruchhoeft P, Colburn M, Choi B, Nounu H, Johnson S, Bailey T, Darmler S, Stewart M, Ekerdt J, Sreenivasan SV, Wolfe JC, Willson CG. Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithography. J. Vac. Sci. Technol., B: Microelectronics and Nanometer Structures 1999; 17: 2965-2969.
90. Segalman RA, Yokoyama H, Kramer EJ. Graphoepitaxy of spherical domain block copolymer films. Adv. Mater. 2001; 13: 1152-1155.
91. Cheng JY, Ross CA, Thomas EL, Smith HI, Vancso GJ. Fabrication of nanostructures with long-range order using block copolymer lithography. Appl. Phys. Lett. 2002; 81: 3657-3659.
92. Asakawa K, Hiraoka T, Hieda H, Sakurai M, Kamata Y, Naito K. Nanopatterning for patterned media using block-copolymer. J. Photopolym. Sci. Technol. 2002; 15: 465-470.
93. Park C, Cheng JY, Fasolka MJ, Mayes AM, Ross CA, Thomas EL, De Rosa C. Double textured cylindrical block copolymer domains via directional solidification on a topographically patterned substrate. Appl. Phys. Lett. 2001; 79: 848-850.
94. Massey JA, Winnik MA, Manners I, Chan VZH, Ostermann JM, Enchelmaier R, Spatz JP, Moeller M. Fabrication of oriented nanoscopic ceramic lines from cylindrical micelles of an organometallic polyferrocene block copolymer. J. Am. Chem. Soc. 2001; 123: 3147-3148.
95. Deng T, Ha YH, Cheng JY, Ross CA. Thomas EL. Micro-patterning of block copolymer solutions. Langmuir 2002; 18: 6719-6722.
96. Yang P, Wirnsberger G, Huang HC, Cordero SR, McGehee MD, Scott B, Deng T, Whitesides GM, Chmelka BF, Buratto SK, Stucky GD. Mirrorless lasing from mesostructured waveguides patterned by soft lithography. Science 2000; 287: 465-467.
97. Bal M, Ursache A, Tuominen MT, Goldbach JT, Russell TP. Nanofabrication of integrated magnetoelectronic devices using patterned self-assembled copolymer templates. Appl. Phys. Lett. 2002; 81: 3479-3481.
98. Spatz JP, Chan VZH, Mossmer S, Kamm F-M, Plettl A, Ziemann P, Möller M. A combined top-down/bottom-up approach to the microscopic localization of metallic nanodots. Adv. Mater. 2002; 14: 1827-1832.
99. Glass R, Arnold M, Bluemmel J, Kueller A, Möller M, Spatz JP. Micro-nanostructure interfaces fabricated by the use of inorganic block copolymer micellar monolayers as negative resist for electron-beam lithography. Adv. Funct. Mater. 2003; 13: 569-575.
100. Ober CK, Li M, Douki K, Goto K, Li X. Lithographic patterning with block copolymers. J. Photopolym. Sci. Technol. 2003; 16: 347-350.
101. Du P, Li M, Douki K, Li X, Garcia CBW, Jain A, Smilgies D-M, Fetters LJ, Gruner SM, Wiesner U, Ober CK. Additive-driven phase-selective chemistry in block copolymer thin films: The convergence of top-down and bottom-up approaches. Adv. Mater. 2004; 16: 953-957.
102. Mark P, Stoykovich MM, Kim SO, Solak HH, Edwards EW, de Pablo JJ, Nealy PF. Directed assembly of block copolymer blends into nonregular device-orientated structures. Science 2005; 308: 1442-1446.