Current status of EUV photoresists

Journal of Photopolymer Science and Technology

Volumn 16, Issue 3, 2003, Pages 401-410

  Brainard, Robert L ^a   Cobb, Jonathan ^b   Cutler, Charlotte A ^a  

^a SHIPLEY COMPANY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

EUVL; Extreme Ultraviolet Lithography; Line edge roughness; Photoresist; Photospeed; Resolution

Indexed keywords

ARTICLE; CHEMOSENSITIVITY; DIFFUSION; DISSOLUTION; FILM; MOLECULAR WEIGHT; OPTICAL RESOLUTION; ULTRAVIOLET RADIATION;

EID: 0038168325     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.16.401     Document Type: Article

References (31)

1. The ITRS can be downloaded from http://public.itrs.net.
2. Jonathan Cobb et al., "Controlling line-edge roughness to within reasonable limits," to be published in Advances in Resist Technology and Processing XX, edited by Ted Fedynyshyn, Proc. SPIE 5039, 2003.
3. W. Hinsberg, F. Houle, G. Wallraff, M. Sanchez, M. Morrison, J. Hoffnagle, H. Ito, C. Nguyen, C. E. Larson, P. J. Brock and G. Breyta, "Factors Controlling Pattern Formation in Chemically Amplified Resists at Sub-100nm Dimensions", J Photopolym. Sci. Technol., Vol. 12(4), 1999, 649.
4. T. Itani, H. Yoshino, S. Hashimoto, S. Hashimoto, M. Yamana, N. Samoto and K. Kasama, "Polymer Structure Effect on dissolution Characteristics and Acid Diffusion in Chemically Amplified Deep Ultraviolet Resists DUV", J. Vac. Sci. Technol. B 15(6) (1997) 2541.
5. W) of 2.9, 4.9, 6.1, 9.1, 16.1, 33.5 Kg/mole.
6. C. Cutler, J. Mackevich, J. Li, D. O'Connell, G. Cardinale and R. Brainard, "Effect of Polymer Molecular Weight on AFM Polymer Aggregate Size and LER of EUV Resists" SPIE Proceedings 2003.
7. The 9K-polymer resist was the same in all three rounds (1-3). An EUV-2D control resist was also imaged in between each round in order to monitor imaging consistency within the 3 rounds. It was found that the combined uncertainty taking into account the variation in the X10 stepper over 4 days of imaging and SEM instrumentation is approximately ± 1.6 nm.
8. R. L. Brainard, C. Henderson, J. Cobb, V. Rao, J.F. Mackevich, U. Okoroanyanwu, S. Gunn, J. Chambers, and S. Connolly J. Vac. Sci. Technol. B, 17(6) (1999) 3384.
9. These results were obtained from light scattering measurements on the 6 different MW polymers. The Raduis of Gyration swelled in THF was measured and the condensed size of the polymers was calculated,
10. T. Yamaguchi, H. Namatsu, M. Nagase, K. Kuihara and Y. Kawai "Line-edge roughness characterized by polymer aggregates in photoresists" SPIE Vol. 3678 1999, 617.
11. H. Namatsu, M. Nagase, T. Yamaguchi, K. Yamazaki and K. Kurihara, "Influence of Edge Roughness in Resist Patternns on Etched Patterns" J. Vac. Sci. Technol. B 16 (6) 1998 3315..
12. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki, and K. Kurihara "Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films" Appl. Phys. Lett. 71 (16), 1997, 2388.
13. C. R. Szmanda and P. Trefonas III, Microelectronic Eng., 13, 23 (1991).
14. -1 for 500, 350, 300, 270, 250, 240, 230, 220, 210, 200, 190, 180, and 170 nm dense lines.
15. The LERs for the DUV features at high ILS are about twice those of the EUV images. A crossover experiment between the two laboratories indicated that the method used to measure the DUV LER gives values which are 4-7 nm higher than those used to measure EUV images. There are many ways for achieving high image log slope in addition to the use of larger feature sizes: high NA steppers, alternating phase masks, or other resolution enhancement techniques.
16. W. D. Hinsberg et al., "Deep ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance," J. Vac. Sci. Tech. B vol. 16, pp. 3689-3694, 1998. M. I. Sanchez et al., "Aerial image contrast using interferometric lithography: effect on line-edge roughness," in Advances in Resist Technology and Processing XVI, W. Conley, ed., Proc. SPIE vol 3678, pp. 160-171, 1999. J. Shin et al., "Resist line edge roughness and aerial image contrast," J. Vac. Sci. Tech. B vol. 19, pp. 2890-2895, 2001.
17. W. D. Hinsberg et al., "Deep ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance," J. Vac. Sci. Tech. B vol. 16, pp. 3689-3694, 1998. M. I. Sanchez et al., "Aerial image contrast using interferometric lithography: effect on line-edge roughness," in Advances in Resist Technology and Processing XVI, W. Conley, ed., Proc. SPIE vol 3678, pp. 160-171, 1999. J. Shin et al., "Resist line edge roughness and aerial image contrast," J. Vac. Sci. Tech. B vol. 19, pp. 2890-2895, 2001.
18. W. D. Hinsberg et al., "Deep ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance," J. Vac. Sci. Tech. B vol. 16, pp. 3689-3694, 1998. M. I. Sanchez et al., "Aerial image contrast using interferometric lithography: effect on line-edge roughness," in Advances in Resist Technology and Processing XVI, W. Conley, ed., Proc. SPIE vol 3678, pp. 160-171, 1999. J. Shin et al., "Resist line edge roughness and aerial image contrast," J. Vac. Sci. Tech. B vol. 19, pp. 2890-2895, 2001.
19. J. A. Hoffnagle, W. D. Hinsberg, and M. I. Sanchez, "Method of measuring the spatial resolution of a photoresist," Optics Letters 27, pp. 1776-1778, 2002.
20. Waikin Li, Harun H. Solak, and Franco Cerrina, "EUV nonolithography: sub-50nm L/S," in Emerging Lithographic Techologies IV, Elizabeth A. Dobisz, editor, Proc. SPIE 3997, 794-798 (2000).
21. Michael D. Shumway et al., "Extremely fine-pitch printing with a 10x Schwarzchild optic at extreme ultraviolet wavelengths," in Emerging Lithographic Technologies V, Elizabeth A. Dobisz, editor, Proc. SPIE4343, 357-362 (2001).
22. W. Hinsberg et al., "Effect of Resist Components on Image Spreading During Postexposure Bake of Chemically Amplified Resists," in Advances in Resist Technology and Processing XVII, Francis M. Houlihan, editor, Proc. SPIE 3999, 148-160 (2000).
23. V. Golovkina, P. Nealey, F. Cerrina, and J. Taylor accepted for presentation at 3Beams 2003.
24. 2 exposed fields per wafer.
25. R. Brainard, D. O'Connell, J. Mackevich, S. Gunn, P. Dentinger, J. Cobb, "Resist Development for EUV Lithography", 3rd Workshop on EUV Lithography, October 2001.
26. Martha I. Sanchez et al., "Aerial Image Contrast Using Inferferometric Lithography: Effect on Line-Edge Roughness," in Advances in Resist Technology and Processing XVI, Will Conley, editor, Proc. SPIE 3678, 160-171 (1999).
27. G. M. Gallatin, "Continuum model of shot noise and line edge roughness," in Lithography for Semiconductor Manufacturing II, C. A. Mack and T. Stevenson, eds., Proc. SPIE 4404, pp. 123-132, 2001.
28. Jonathan Cobb, Frances Houle, and Gregg Gallatin, "The estimated impact of shot noise in extreme ultraviolet lithography," to be published in Emerging Lithographic Technologies VII, edited by Roxann L. Engelstad, Proc. SPIE 5037, 2003.
29. C. Pike et al., "Lithography Using Ultrathin Resist Films," J. Vac. Sci. Tech. B 18, 3360-3363 (2000).
30. Richard D. Peters et al., "Fabrication of Integrated Circuits with High Yield Using Ultra-Thin Resist Processes," to be published in Advances in Resist Technology and Processing XX, edited by Ted Fedynyshyn, Proc. SPIE 5039, 2003.
31. Jonathan Cobb et al., "Integration of Ultrathin Resist Processes into MPU IC Manufacturing Flows," in Advances in Resist Technology and Processing XIX, Theodore H. Fedynyshyn, editor, Proc. SPIE 4690, 277-286 (2002).