Evaluation of the outgassing from resists at the EUV wavelength

Journal of Photopolymer Science and Technology

Volumn 14, Issue 4, 2001, Pages 561-565

  Irie, Shigeo ^a   Oizumi, Hiroaki ^a   Nishiyama, Iwao ^a   Shirayone, Shigeru ^a   Ryoo, Manhyoung ^a   Yamanashi, Hiromasa ^a   Yano, Ei ^a   Okazaki, Shinji ^a  

^a Technology   (Japan)

Author keywords

Adhesion; Contamination; EUVL; Outgassing; QMS; Resist; TOF SIMS

Indexed keywords

COPOLYMER; MOLYBDENUM; RESIN; SILICON;

ADHESION; ARTICLE; EXTREME ULTRAVIOLET LITHOGRAPHY; LITHOGRAPHY; MASS SPECTROMETRY; MATERIALS; MEASUREMENT; OPTICS; ULTRAVIOLET IRRADIATION;

EID: 0035746896     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.14.561     Document Type: Article

References (5)

1. Soft x-ray reduction lithography
2. Top surface Imaging for extreme ultraviolet lithography
3. Novel silicon-containing resists for EUV and 193-nm lithography
4. Outgassing of photoresists in extreme ultraviolet lithography
5. Outgassing of photoresists materials at extreme ultraviolet wavelengths