Development of resist materials for EUVL

Journal of Photopolymer Science and Technology

Volumn 13, Issue 3, 2000, Pages 385-389

  Irie, Shigeo ^a   Shirayone, Shigeru ^a   Mori, Shigeyasu ^a   Oizumi, Hiroaki ^a   Matsuzawa, Nobuyuki ^a   Yano, Ei ^a   Okazaki, Shinji ^a   Watanabe, Takeo ^b   Kinoshita, Hiroo ^b  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

Chemically amplified resist; Extreme ultra violet lithography; Single layer resist

Indexed keywords

ARTICLE; EXPOSURE; GAMMA RADIATION; IMAGING SYSTEM; MATERIAL COATING; SURFACE PROPERTY; TECHNOLOGY;

EID: 0034583957     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.13.385     Document Type: Article

References (17)

1. Soft x-ray reduction lithography
2. Top surface imaging for extreme ultraviolet lithography
3. Novel silicon-containing resists for EUV and 193-nm lithography
4. New UV resists with negative or positive tone
5. Airbone chemical contamination of a chemically amplified resis
6. Chemical amplification in the design of dry developing resist materials
7. Polymers in electronics
8. Deep UV photoresists, photospeed, resolution, and environment stability tradeoffs
9. Characteristics of an improved chemically amplified deep-ultraviolet positive resist
10. Advanced resists for ULSI deep UV lithography
11. Theoretical estimation of absorption coefficients of various polymeres at 13nm
12. Characterization of chemically amplified resists for soft x-ray projection lithography
13. Sub-0.1 μm resist patterning in soft x-ray (13 nm) projection lithography
14. Design of beamline optics for EUVL
15. A novel design of three-aspherical-mirror imaging optics for extreme ultra-violet lithography
16. Three-ashpherical mirror system for EUV lithography