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Volumn 53, Issue 1, 2000, Pages 13-20

Image formation in EUV lithography: multilayer and resist properties

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC FIELDS; IMAGE PROCESSING; LIGHT PROPAGATION; MASKS; MULTILAYERS; REFLECTION; ULTRAVIOLET SPECTROSCOPY;

EID: 0034206444     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00260-4     Document Type: Article
Times cited : (21)

References (22)
  • 1
    • 0021190673 scopus 로고
    • A synchrotron radiation X-ray lithography beam line of novel design
    • Jan/Feb
    • [1] F. Cerrina, H. Guckel, J.D. Wiley and J.W. Taylor, A synchrotron radiation X-ray lithography beam line of novel design, J. Vac. Sci. Technol. B3(1), 227-231, Jan/Feb (1985)
    • (1985) J. Vac. Sci. Technol. , vol.B3 , Issue.1 , pp. 227-231
    • Cerrina, F.1    Guckel, H.2    Wiley, J.D.3    Taylor, J.W.4
  • 14
    • 0032402855 scopus 로고    scopus 로고
    • Modeling study of image formation with point sources
    • [14] B.S. Bollepalli, M. Khan and F. Cerrina, Modeling study of image formation with point sources, SPIE Proc. 3331, 388 (1998)
    • (1998) SPIE Proc. , vol.3331 , pp. 388
    • Bollepalli, B.S.1    Khan, M.2    Cerrina, F.3
  • 16
    • 0007149023 scopus 로고    scopus 로고
    • Modeling image formation in layered structures: Application to X-ray lithography
    • [16] S.B. Bollepalli, M. Khan and F. Cerrina, Modeling image formation in layered structures: Application to X-ray lithography, MSM Proc. 53 (1998)
    • (1998) MSM Proc. , vol.53
    • Bollepalli, S.B.1    Khan, M.2    Cerrina, F.3
  • 18
    • 0033265197 scopus 로고    scopus 로고
    • Extreme ultraviolet mask defect simulation
    • [18] T. Pistor and A. Neureuther, Extreme ultraviolet mask defect simulation, Journ. Vac. Sci. and Techn., 3019-3023, 17, 1999
    • (1999) Journ. Vac. Sci. and Techn. , vol.17 , pp. 3019-3023
    • Pistor, T.1    Neureuther, A.2
  • 22
    • 0000863425 scopus 로고    scopus 로고
    • Process dependence of roughness in a positive-tone chemically amplified resists
    • [22] D. He and F. Cerrina, Process dependence of roughness in a positive-tone chemically amplified resists, J. Vac. Sci. Technol. B16(6), 3748 (1998)
    • (1998) J. Vac. Sci. Technol. , vol.B16 , Issue.6 , pp. 3748
    • He, D.1    Cerrina, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.