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1
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0021190673
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A synchrotron radiation X-ray lithography beam line of novel design
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Jan/Feb
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[1] F. Cerrina, H. Guckel, J.D. Wiley and J.W. Taylor, A synchrotron radiation X-ray lithography beam line of novel design, J. Vac. Sci. Technol. B3(1), 227-231, Jan/Feb (1985)
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(1985)
J. Vac. Sci. Technol.
, vol.B3
, Issue.1
, pp. 227-231
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Cerrina, F.1
Guckel, H.2
Wiley, J.D.3
Taylor, J.W.4
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4
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0000130079
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Extreme ultraviolet lithography
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[4] C. W. Gwyn, R. Stulen, D. Sweeney, and D. Attwood, Extreme ultraviolet lithography, Journ. Vac. Sci. and Techn., 16, pp. 3142-3149 (1998)
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(1998)
Journ. Vac. Sci. and Techn.
, vol.16
, pp. 3142-3149
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Gwyn, C.W.1
Stulen, R.2
Sweeney, D.3
Attwood, D.4
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5
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0030284208
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Precision optical aspheres for extreme ultraviolet lithography
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[5] D. R. Kania, D. P. Gaines, D. S. Sweeney, G. E. Sommargren, B. La Fontaine, S. P. Vernon, D. A. Tichenor, J. E. Bjorkholm, F. Zernike, and R. N. Kestner, Precision optical aspheres for extreme ultraviolet lithography, Journ. Vac. Sci. and Techn., 14 pp. 3706-3708, (1996)
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(1996)
Journ. Vac. Sci. and Techn.
, vol.14
, pp. 3706-3708
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Kania, D.R.1
Gaines, D.P.2
Sweeney, D.S.3
Sommargren, G.E.4
La Fontaine, B.5
Vernon, S.P.6
Tichenor, D.A.7
Bjorkholm, J.E.8
Zernike, F.9
Kestner, R.N.10
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7
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0000947837
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Imaging properties of the EUV mask
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Nov/Dec
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[7] B.S. Bollepalli, M. Khan and F. Cerrina, Imaging properties of the EUV mask, J. Vac. Sci. Technol. B 16(6), 3444, Nov/Dec (1998)
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(1998)
J. Vac. Sci. Technol. B
, vol.16
, Issue.6
, pp. 3444
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Bollepalli, B.S.1
Khan, M.2
Cerrina, F.3
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10
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0033269284
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Characterization of the manufacturability of ultrathin resist
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[10] K. B. Nguyen, C. Lyons, J. Schefske, C. Pike, K. Phan, P. King, H. Levinson, S. Bell, and U. Okoroanyanwu, Characterization of the manufacturability of ultrathin resist, Journ. Vac. Sci. and Techn., 17, 3039-3042 (1999)
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(1999)
Journ. Vac. Sci. and Techn.
, vol.17
, pp. 3039-3042
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Nguyen, K.B.1
Lyons, C.2
Schefske, J.3
Pike, C.4
Phan, K.5
King, P.6
Levinson, H.7
Bell, S.8
Okoroanyanwu, U.9
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11
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85031573535
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submitted to SPIE '99
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[11] H.H. Solak, D. He, W. Li, F. Cerrina, B.H. Sohn, X. Yang, P. Nealey, EUV Interferometric Lithography for Resist Characterization, submitted to SPIE '99
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EUV Interferometric Lithography for Resist Characterization
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Solak, H.H.1
He, D.2
Li, W.3
Cerrina, F.4
Sohn, B.H.5
Yang, X.6
Nealey, P.7
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12
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0007086309
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Interferometric lithography in the UV region using a synchrotron radiation source
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[12] H.H. Solak, D. He, W. Li, S. Singh-Gasson, F. Cerrina, B.H. Sohn, X.M. Yang, P. Nealey, Interferometric lithography in the UV region using a synchrotron radiation source, Appl. Phys.Lett., 1999
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(1999)
Appl. Phys.Lett.
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Solak, H.H.1
He, D.2
Li, W.3
Singh-Gasson, S.4
Cerrina, F.5
Sohn, B.H.6
Yang, X.M.7
Nealey, P.8
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14
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0032402855
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Modeling study of image formation with point sources
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[14] B.S. Bollepalli, M. Khan and F. Cerrina, Modeling study of image formation with point sources, SPIE Proc. 3331, 388 (1998)
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(1998)
SPIE Proc.
, vol.3331
, pp. 388
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Bollepalli, B.S.1
Khan, M.2
Cerrina, F.3
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16
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0007149023
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Modeling image formation in layered structures: Application to X-ray lithography
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[16] S.B. Bollepalli, M. Khan and F. Cerrina, Modeling image formation in layered structures: Application to X-ray lithography, MSM Proc. 53 (1998)
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(1998)
MSM Proc.
, vol.53
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Bollepalli, S.B.1
Khan, M.2
Cerrina, F.3
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17
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0000242922
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EUV mask absorber defect size requirement at 0.1 um design rules
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[17] P.-Y. Yan, G.-J. Zhang, J. Chow, P. Kofron, J. Langston, H. Solak, P. Kearney, G. Cardinale, K. Berger and C. Henderson, EUV mask absorber defect size requirement at 0.1 um design rules, SPIE Proc. 3331, 638 (1998)
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(1998)
SPIE Proc.
, vol.3331
, pp. 638
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Yan, P.-Y.1
Zhang, G.-J.2
Chow, J.3
Kofron, P.4
Langston, J.5
Solak, H.6
Kearney, P.7
Cardinale, G.8
Berger, K.9
Henderson, C.10
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18
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0033265197
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Extreme ultraviolet mask defect simulation
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[18] T. Pistor and A. Neureuther, Extreme ultraviolet mask defect simulation, Journ. Vac. Sci. and Techn., 3019-3023, 17, 1999
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(1999)
Journ. Vac. Sci. and Techn.
, vol.17
, pp. 3019-3023
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Pistor, T.1
Neureuther, A.2
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22
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0000863425
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Process dependence of roughness in a positive-tone chemically amplified resists
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[22] D. He and F. Cerrina, Process dependence of roughness in a positive-tone chemically amplified resists, J. Vac. Sci. Technol. B16(6), 3748 (1998)
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(1998)
J. Vac. Sci. Technol.
, vol.B16
, Issue.6
, pp. 3748
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He, D.1
Cerrina, F.2
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