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Journal of Photopolymer Science and Technology

Volumn 15, Issue 3, 2002, Pages 361-366

Characteristics of CA resist in EUV lithography

(5) Hamamoto, Kazuhiro a Watanabe, Takeo a Hada, Hideo b Komano, Hiroshi b Kinoshita, Hiroo a

a UNIVERSITY OF HYOGO (Japan)

b TOKYO OHKA KOGYO CO LTD (Japan)

Author keywords

CA resist; Extreme Ultraviolet Lithography; Large field exposure

Indexed keywords

POLYMER;

ARTICLE; ELECTRONICS; EXTREME ULTRAVIOLET LITHOGRAPHY; ILLUMINATION; MASS SPECTROMETER; NANOTECHNOLOGY; OPTICS; SEMICONDUCTOR; TEMPERATURE;

EID: 0036369816 PISSN: 09149244 EISSN: None Source Type: Journal
DOI: 10.2494/photopolymer.15.361 Document Type: Article

Times cited : (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.