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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 4225-4230

Negative resist material based on polysilanes for electron beam and X-ray lithographies

(5) Seki, Shu a Sakurai, Yusuke a Maeda, Kensaku a Kunimi, Yoshihisa a Tagawa, Seiichi a

a OSAKA UNIVERSITY (Japan)

Author keywords

Electron beam; Gel; Hydrosilylation; Negative resist; Polysilane; Positive resist; Sol; rays

Indexed keywords

CHEMICAL BONDS; CROSSLINKING; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; GAMMA RAYS; GELS; POLYSILANES; REACTION KINETICS; ULTRAVIOLET RADIATION; X RAY LITHOGRAPHY; X RAYS;

HYDROSILYLATION; NEGATIVE RESIST MATERIAL; POLYHYDROSILANES; POLYMER GELS; POSITIVE RESIST; SILICON BRANCHING;

PHOTORESISTS;

EID: 0034215499 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.4225 Document Type: Article

Times cited : (6)

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