Reaction mechanisms in silicon-based resist materials: Polysilanes for deep-UV, EUV, and X-ray lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3999 (I), Issue , 2000, Pages 423-430

  Seki, S ^a   Sakurai, Y ^a   Maeda, K ^a   Kunimi, Y ^a   Nagahara, S ^a   Tagawa, Seiichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COLLOIDS; CROSSLINKING; ELECTRON BEAMS; GAMMA RAYS; HYDROGEN BONDS; ION BEAMS; POLYSILANES; RADIATION EFFECTS; REACTION KINETICS; SEMICONDUCTING SILICON; ULTRAVIOLET RADIATION; X RAY LITHOGRAPHY;

DEEP ULTRAVIOLET LITHOGRAPHY; EXTREME ULTRAVIOLET LITHOGRAPHY; HYDROSILYLATION;

PHOTORESISTS;

EID: 0033708237     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.388326     Document Type: Conference Paper

References (18)