Control of line edge roughness of ultrathin resist films subjected to EUV exposure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 903-911

  Ryoo, Manhyoung ^a   Shirayone, Shigeru ^a   Oizumi, Hiroaki ^a   Matsuzawa, Nobuyuki ^a   Irie, Nobuyuki ^a   Yano, Ei ^a   Okazaki, Shinji ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COHERENT LIGHT; DIFFUSION IN LIQUIDS; DISSOLUTION; PHOTORESISTS; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

CHEMICAL AMPLIFICATION (CA); LINE EDGE ROUGHNESS (LER);

ULTRATHIN FILMS;

EID: 0034765786     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436814     Document Type: Article

References (12)

1. A high performance 0.13um SOI CMOS technology with Cu interconnects and lok-k BEOL dielectric