Evaluation of a high performance chemically amplified resist for EUVL mask fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5037 II, Issue , 2003, Pages 952-961

  Lu, Bing ^a   Weisbrod, Eric ^a   Mangat, Pawitter ^a   Nordquist, Kevin ^a   Ainley, Eric ^a  

^a MOTOROLA INC   (United States)

Author keywords

Chemically amplified; E beam; EUVL; Mask; Resists

Indexed keywords

ELECTRON BEAMS; MASKS; PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; SPATIAL VARIABLES MEASUREMENT; TEMPERATURE; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

CRITICAL DIMENSIONAL UNIFORMITY; ELECTRON BEAM EXPOSURE SYSTEM; EXTREME ULTRAVIOLET LITHOGRAPHY; MASK FABRICATION;

PHOTORESISTS;

EID: 0141835914     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504553     Document Type: Conference Paper

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