Comparison of the lithographic properties of positive resists upon exposure to deep- And extreme-ultraviolet radiation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 3384-3389

  Brainard, Robert L ^a   Henderson, Craig ^b   Cobb, Jonathan ^b   Rao, Veena ^c   Mackevich, Joseph F ^a   Okoroanyanwu, Uzodinma ^d   Gunn, Scott ^b   Chambers, Janet ^c   Connolly, Susan ^a  

^a SHIPLEY COMPANY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c INTEL CORPORATION   (United States)

^d ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040707392     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591015     Document Type: Article

References (14)

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8. C. R. Szmanda, et al., J. Vac. Sci. Technol. B, these proceedings.
9. The "X-Ray Interaction with Matter" website (www-cxro.lbl.gov/optical_constants) has an algorithm for calculating the absorption of EUV by thin films;
10. B. L. Henke, E. M. Gullikson, and J. C. Davis, At. Data Nucl. Data Tables 54, 181 (1993).
11. C. R. Szmanda and P. Trefonas III, Microelectron. Eng. 13, 23 (1991).
12. -1 for 500, 350, 300, 270, 250, 240, 230, 220, 210, 200, 190, 180, and 170 nm dense lines.
13. The LERs for the DUV features at high ILS are about twice those of the EUV images. A crossover experiment between the two laboratories indicated that the method used to measure the DUV LER gives values which are 4-7 nm higher than those used to measure EUV images.
14. There are many ways for achieving high image log slope in addition to the use of larger feature sizes: high NA steppers, alternating phase masks, or other resolution enhancement techniques.