Sub-10-nm-scale lithography using p-chloroinethyl-methoxy-calix[4]arene resist

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 B, 2003, Pages 3913-3916

  Ishida, Masahiko ^a   Fujita, Jun Ichi ^a   Ogura, Takashi ^a   Ochiai, Yukinori ^a   Ohshima, Eiji ^b   Momoda, Junji ^b  

^a NEC CORPORATION   (Japan)

^b TOKUYAMA CORPORATION   (Japan)

Author keywords

Calixarene; Electron beam; High resolution; Lithography; Resist

Indexed keywords

CHLORINE; MOLECULAR WEIGHT; ORGANIC COMPOUNDS; SOLUBILITY; SOLVENTS;

ELECTRON-BEAM (EB) RESISTS;

ELECTRON BEAM LITHOGRAPHY;

EID: 0042863401     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.3913     Document Type: Conference Paper

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