Broad-band extreme ultraviolet lithography with a wet-silylated and dry-developed resist

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 291-294

  Oizumi, Hiroaki ^b,c   Yamashita, Yoshio ^b   Ohtani, Masayuki ^a  

^a NIKON CORPORATION   (Japan)

^b SORTEC Corporation   (Japan)

^c HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IMAGING TECHNIQUES; LIGHT SOURCES; OPTICS; PHOTORESISTS; SYNCHROTRON RADIATION; ULTRAVIOLET RADIATION; VACUUM APPLICATIONS;

EXTREME ULTRAVIOLET LITHOGRAPHY; SCHWARZSCHILD OPTICS; SILYLATION; VACUUM WINDOW;

PHOTOLITHOGRAPHY;

EID: 0029732788     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00248-0     Document Type: Article

References (6)

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