Synthesis and evaluation of novel organoelement resists for EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 II, Issue , 2003, Pages 1164-1172

  Dai, Junyan ^a   Ober, Christopher K ^a   Kim, Sang Ouk ^b   Nealey, Paul ^b   Golovkina, Victoria ^b   Shin, Jangho ^b   Wang, Lin ^b   Cerrina, Franco ^b  

^a School of Chemical and Molecular Engineering   (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

Boron containing resists; EUV lithography; EUV resists; Ling edge roughness; Silicon containing resists

Indexed keywords

BORON; CARBOXYLIC ACIDS; COPOLYMERS; ETCHING; INTERFEROMETRY; LITHOGRAPHY; OXYGEN; SILICON; SURFACE ROUGHNESS;

ETCH RESISTANCE; LINE EDGE ROUGHNESS; ORGANOELEMENT; SILICON CONTAINING POLYMERS;

PHOTORESISTS;

EID: 0141722646     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485116     Document Type: Conference Paper

References (6)

1. J. Leebrick, H. Ramsden, J. Org. Chem., 23, 935, 1958
2. Y. Kaxakami, H. Hisada, U. Yamashita, J. Polym. Sci,. Polym. Chem. 26, 1307, 1988
3. J. Dai, C. Ober et al., Proceedings of SPIE-The International Society for Optical Engineering, 4690, 2002
4. S. Mirviss, Organic and Biological Chemistry, 83, 3051, 1961
5. J. Shin, G. Han, Y. Ma, K. Moloni and F. Cerrina, J. Vac. Sci. Tech. B 19, 2890, 2001
6. G. Mao, J. Wang and C. Ober et al, Macromolecules, 30, 2556, 1997