Device and technology evolution for Si-based RF integrated circuits

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1235-1258

  Bennett, Herbert S ^a   Brederlow, Ralf ^b   Costa, Julio C ^c   Cottrell, Peter E ^d   Huang, W Margaret ^e   Immorlica Jr , Anthony A ^f   Mueller, Jan Erik ^b   Racanelli, Marco ^g   Shichijo, Hisashi ^h   Weitzel, Charles E ^e   Zhao, Bin ⁱ  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c RF MICRO DEVICES   (United States)

^d IBM   (United States)

^e FREESCALE SEMICONDUCTOR INC   (United States)

^f BAE SYSTEMS   (United States)

^g Jazz Semiconductor   (United States)

^h Texas Istruments   (United States)

ⁱ SKYWORKS SOLUTIONS INC   (United States)

Author keywords

Bipolar transistors; Cellular phones; Communication networks; Field effect transistors (FETs); Figures of merit (FoMs); Power amplifier (PA); RF CMOS; RF technologies; Technology evolution; Transceivers; Wireless networks

Indexed keywords

CAPACITORS; CELLULAR TELEPHONE SYSTEMS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC INDUCTORS; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS; TRANSCEIVERS; VARACTORS; WIRELESS TELECOMMUNICATION SYSTEMS;

CELLULAR PHONES; FIGURE OF MERITS (FOMS); RF CMOS; RF TECHNOLOGIES; TECHNOLOGY EVOLUTION;

CMOS INTEGRATED CIRCUITS;

EID: 23944519011     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850645     Document Type: Review

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