High performance silicon bipolar power amplifier for 1.8 GHz applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 1015-1018

  Carrara, Francesco ^a   Castorina, Alessandro ^a   Scuderi, Antonino ^b   Palmisano, Giuseppe ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; ELECTRIC POWER SUPPLIES TO APPARATUS; INTEGRATED CIRCUIT LAYOUT; MICROPROCESSOR CHIPS; MIM DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE TESTING; SILICON; TELEPHONE SETS; TRANSMITTERS;

METAL-INSULATOR-METAL CAPACITOR; MONOLITHIC POWER AMPLIFIER; OXIDE TRENCH ISOLATION; POWER ADDED EFFICIENCY; SILICON BIPOLAR POWER AMPLIFIER; SILICON BIPOLAR TECHNOLOGY;

POWER AMPLIFIERS;

EID: 0036066865     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011802     Document Type: Article

References (8)

1. A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz
2. A monolithic 2.5 V, 1 W silicon bipolar amplifier with 55% PAE at 1.9 GHz
3. An integrated 2 GHz 500 mW bipolar amplifier
4. A very high efficiency silicon bipolar transistor
5. Class-F power amplifiers with maximally flat waveforms
6. Effects of matching on RF power amplifier efficiency and output power