Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric

IEEE Electron Device Letters

Volumn 23, Issue 9, 2002, Pages 520-522

  Huo, Xiao ^a,b   Chen, Kevin J ^a,b   Chan, Philip C H ^a,b  

^a IEEE   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Benzocyclobutene (BCB); CMOS; Electroplated copper; High Q inductor; Silicon substrate

Indexed keywords

HIGH-Q INDUCTORS; RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC);

AROMATIC COMPOUNDS; COMPUTER AIDED DESIGN; COPPER; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC LOSSES; ELECTROPLATING; INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PERMITTIVITY; Q FACTOR MEASUREMENT; SEMICONDUCTING SILICON;

ELECTRIC INDUCTORS;

EID: 0036713966     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.802652     Document Type: Article

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