Tailoring logic CMOS for RF applications

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2001, Pages 150-153

  Burghartz, J N ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; FREQUENCY RESPONSE; GATES (TRANSISTOR); LOGIC CIRCUITS; RADIO FREQUENCY AMPLIFIERS;

GATE DIELECTRIC;

CMOS INTEGRATED CIRCUITS;

EID: 0034842512     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. CMOS-only RF and baseband circuits for a monolithic 900 MHz wireless transceiver
2. High performance RF characteristics of raised gate/sourec/drain CMOS with Co salicide
3. CMOS scaling into the nanometer regime
4. An assessment of the sate-of-the-art 0.5 μm bulk CMOS technology for RF applications
5. High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay
6. RF Potential of a 0.18 □m CMOS logic technology