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Volumn , Issue , 2004, Pages 98-99

A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC INDUCTORS; FREQUENCIES; MASKS; MICROPROCESSOR CHIPS; MICROSTRIP LINES; SEMICONDUCTOR JUNCTIONS; TUNING; VARACTORS;

EID: 4544286733     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (46)

References (11)
  • 2
    • 0142248026 scopus 로고    scopus 로고
    • SOI nano-technology for high-performance system on-chip applications
    • J.-O. Plouchart "SOI nano-technology for high-performance system on-chip applications," 2003 SOI Conference, pp. 1-4
    • 2003 SOI Conference , pp. 1-4
    • Plouchart, J.-O.1
  • 3
    • 0348158502 scopus 로고    scopus 로고
    • Application of an SOI 0.12-μm CMOS technology to SoCs with low-power and high-frequency circuits
    • J.O. Plouchart, et. al. "Application of an SOI 0.12-μm CMOS technology to SoCs with low-power and high-frequency circuits," 2003 IBM Journal of Research and Development, Vol. 47, No. 5/6
    • 2003 IBM Journal of Research and Development , vol.47 , Issue.5-6
    • Plouchart, J.O.1
  • 4
    • 0041589141 scopus 로고    scopus 로고
    • A power efficient 33 GHz 2:1 static frequency divider in 0.12-μm SOI CMOS
    • J.-O. Plouchart, et. al. "A Power Efficient 33 GHz 2:1 Static Frequency Divider in 0.12-μm SOI CMOS," RFIC 2003, pp. 329-332
    • RFIC 2003 , pp. 329-332
    • Plouchart, J.-O.1
  • 5
    • 6444224841 scopus 로고    scopus 로고
    • A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-μm SOI CMOS technology
    • J.-O. Plouchart, et. al., "A 31 GHz CML Ring VCO with 5.4 ps Delay in a 0.12-μm SOI CMOS Technology," ESSCIRC 2003
    • ESSCIRC 2003
    • Plouchart, J.-O.1
  • 6
    • 17644445890 scopus 로고    scopus 로고
    • Highly manufacturable 40-50 GHz VCOs in a 120nm system-on-chip SOI technology
    • J. Kim, et. al. "Highly Manufacturable 40-50 GHz VCOs in a 120nm System-on-Chip SOI Technology," IEDM 2003
    • IEDM 2003
    • Kim, J.1
  • 7
    • 2442680724 scopus 로고    scopus 로고
    • A 12-dBm 320-GHz GBW distributed amplifier in a SOI 0.12μm CMOS technology
    • Jonghae Kim, et. al., "A 12-dBm 320-GHz GBW Distributed Amplifier in a SOI 0.12μm CMOS Technology," ISSCC 2004
    • ISSCC 2004
    • Kim, J.1
  • 10
    • 4544380384 scopus 로고    scopus 로고
    • Agilent product ATF-36077
    • Agilent product ATF-36077
  • 11
    • 4544341960 scopus 로고    scopus 로고
    • Integration of high-performance RF passives in a standard SOI CMOS microprocessor technology
    • J.-O. Plouchart "Integration of High-Performance RF Passives in a Standard SOI CMOS Microprocessor Technology," 2003 Advanced Metallization Conference
    • 2003 Advanced Metallization Conference
    • Plouchart, J.-O.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.