A 1W CMOS power amplifier for GSM-1800 with 55% PAE

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 911-914

  Fallesen, Carsten ^a   Asbeck, Per ^a  

^a Thrane and Thrane A S   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CELLULAR TELEPHONE SYSTEMS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; RADIO FREQUENCY AMPLIFIERS; STANDARDS; SUBSTRATES; TELEPHONE SETS;

DECOUPLING CAPACITORS; MOBILE HANDSETS; POWER UTILIZATION FACTOR;

POWER AMPLIFIERS;

EID: 0035689770     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Structured design and modeling of highly integrated RF power amplifiers
2. A 1 W 0.35 um CMOS power amplifier for GSM-1800 with 45% PAE
3. The design of 433 MHz class AB CMOS power amplifier
4. Fully-integrated CMOS RF amplifiers
5. A RF power amplifier in a digital CMOS process
6. A 1.2V, 430 MHz, 4 dBm power amplifier and a 250uW front-end, using a standard digital CMOS process
7. A 2.5-V, 1-W monolithic CMOS RF power amplifier
8. A common-gate switched, 0.9W class-E power amplifier with 41% PAE in 0.2 um CMOS
9. A 1.9 GHz 1-W CMOS class-E power amplifier for wireless communications