Mixed-signal performance of Sub-100nm fully-depleted SOI devices with metal gate, high K (HfO 2) dielectric and elevated Source/Drain extensions

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 975-977

  Vandooren, A ^a   Thean, A V Y ^a   Du, Y ^a   To, I ^a   Hughes, J ^a   Stephens, T ^a   Huang, M ^a   Egley, S ^a   Zavala, M ^a   Sphabmixay, K ^b   Barr, A ^a   White, T ^a   Samavedam, S ^a   Mathew, L ^a   Schaeffer, J ^a   Triyoso, D ^a   Rossow, M ^a   Roan, D ^a   Pham, D ^a   Rai, R ^a   Nguyen, B Y ^a   White, B ^a   Orlowski, M ^a   Duvallet, A ^a   Dao, T ^a   Mogab, J ^a   more..

^a MOTOROLA INC   (United States)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION EFFECTS; GATE LEAKAGE; TRANSISTOR MISMATCH;

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; DIGITAL CIRCUITS; ELECTRIC CONDUCTIVITY; ELECTRODES; ETCHING; GATES (TRANSISTOR); MOSFET DEVICES; OXIDATION; POLYSILICON; SEMICONDUCTOR DOPING; SIGNAL TO NOISE RATIO; SILICON WAFERS; SPURIOUS SIGNAL NOISE; TRANSMISSION ELECTRON MICROSCOPY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 17644439241     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. Yoshimi et al., IEEE Trans. Electron Devices, vol. 36, pp. 493-503, 1989.
2. S. Samavedam et al., Proc. 2002 Symposium on VLSI Technology, p.24-25.
3. A. Blaum et. al, Proc. IEEE 2001 ICMTS, pp. 125-130, March 2001
4. R. van Tiemeijer et.al. "RF-distortion in deep sub_micron CMOS technologies," IEDM, 2000, pp.807-810