A 0.18μm BiCMOS technology featuring 120/100 GHz (ft/fmax) HBT and ASIC-compatible CMOS using copper interconnect

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2001, Pages 143-146

  Joseph, A ^a   Coolbaugh, D ^a   Zierak, M ^a   Wuthrich, R ^a   Geiss, P ^a   He, Z ^a   Liu, X ^a   Orner, B ^a   Johnson, J ^a   Freeman, G ^a   Ahlgren, D ^a   Jagannathan, B ^a   Lanzerotti, L ^a   Ramachandran, V ^a   Malinowski, J ^a   Chen, H ^a   Chu, J ^a   Gray, P ^a   Johnson, R ^a   Dunn, J ^a   Subbanna, S ^a   Schonenberg, K ^a   Harame, D ^a   Groves, R ^a   Watson, K ^a   Jadus, D ^a   Meghelli, M ^a   Rylyakov, A ^a   more..

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DATA COMMUNICATION SYSTEMS; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS;

BICMOS TECHNOLOGY;

CMOS INTEGRATED CIRCUITS;

EID: 0035173259     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. T SiGe HBT BiCMOS, ASIC compatible, copper interconnect technology for RF and microwave applications
2. Suppression of boron outdiffusion in SiGe HBTs with carbon incorporation
3. Carbon doped SiGe heterojunction bipolar transistors for high frequency applications
4. eff CMOS
5. 40-Gbit/s nets call for process shift