90nm CMOS RF Technology with 9.0V I/O Capability for Single-Chip Radio

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 87-88

  Baldwin, G ^a   Ai, J ^a   Benaissa, K ^a   Chen, F ^a   Chidambaram, P R ^a   Ekbote, S ^a   Ghneim, S ^a   Liu, S ^a   Machala, C ^a   Mehrad, F ^a   Mosher, D ^a   Pollack, G ^a   Tran, T ^a   Williams, B ^a   Yang, J ^a   Yang, S ^a   Johnson, F S ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LOGIC DEVICES; TRANSISTORS;

DIGITAL TECHNOLOGY;

CMOS INTEGRATED CIRCUITS;

EID: 0141538334     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. H. S. Momose, et. al, "Cutoff Frequency and Propogation Delay Time of 1.5-nm Gate Oxide CMOS," IEEE Trans Elect. Dev., vol. 48, no. 6, pp. 1165-1174, June 2001
2. S. Yang, et. al., in press.
3. F. S. Johnson, et. al., BCTM 2001, p. 56.