130-GHz fT SiGe HBT technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 791-794

  Oda, Katsuya ^a   Ohue, Eiji ^a   Tanabe, Masamichi ^a   Shimamoto, Hiromi ^a   Onai, Takahiro ^a   Washio, Katsuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY;

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84886448070     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)