3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique

IEEE Journal of Solid-State Circuits

Volumn 35, Issue 8, 2000, Pages 1109-1120

  Yamamoto, Kazuya ^a,b   Suzuki, Satoshi ^a   Mori, Kazutomi ^a   Asada, Tomoyuki ^a   Okuda, Toshio ^a   Inoue, Akira ^a   Miura, Takeshi ^a   Chomei, Kenichiro ^a   Hattori, Ryo ^a   Yamanouchi, Masahide ^a   Shimura, Teruyuki ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b System LSI Development Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CORDLESS TELEPHONES; ELECTRIC POWER SUPPLIES TO APPARATUS; HETEROJUNCTION BIPOLAR TRANSISTORS; MOBILE TELECOMMUNICATION SYSTEMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ACTIVE FEEDBACK CIRCUIT; ALUMINUM GALLIUM ARSENIDE; DUAL BAND APPLICATIONS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; VOLTAGE STANDING WAVE RATIO;

POWER AMPLIFIERS;

EID: 0034250026     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.859499     Document Type: Article

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