A single supply high performance PA MMIC for GSM handsets using quasi-enhancement mode PHEMT

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 923-926

  Abey, Warren ^a   Moriuchi, Toshiaki ^b   Hajji, Rached ^a   Nakamura, Tomohiro ^b   Nonaka, Yasunori ^b   Mitani, Eizo ^b   Kennan, Wayne ^c   Dang, Hao ^a  

^a FUJITSU LABORATORIES OF AMERICA   (United States)

^b FUJITSU LABORATORIES LTD   (Japan)

^c Fujitsu Compound Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC POWER SUPPLIES TO APPARATUS; GATES (TRANSISTOR); GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MIM DEVICES; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TELEPHONE SETS; TRANSCONDUCTANCE;

POWER ADDED EFFICIENCY; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR; QUASI ENHANCEMENT MODE; SCHOTTKY GATES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0035692327     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967042     Document Type: Article

References (2)

1. A single supply miniature PA MMIC for multi-mode digital handsets using quasi-enhancement mode PHEMT
2. An E-mode GaAs FET power amplifier MMIC for GSM phones