A 150GHz fT/fmax 0.13μm SiGe:C BiCMOS technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2003, Pages 199-202

  Laurens, M ^a   Martinet, B ^a   Kermarrec, O ^a   Campidelli, Y ^a   Deleglise F ^a   Dutartre, D ^a   Troillard, G ^a   Gloria, D ^a   Bonnouvrier, J ^a   Beerkens, R ^b   Rousset, V ^a   Leverd, F ^a   Chantre, A ^a   Monroy, A ^a  

^a STMICROELECTRONICS   (France)

^b Central RandD   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COPPER; POLYSILICON; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; WIRELESS TELECOMMUNICATION SYSTEMS;

COPPER BACK END; OPTICAL NETWORKING; POLYSILICON EMITTER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1042277548     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. J.S. Rieh et al, "SiGe HBTs with Cut-Off Frequency of 350GHz", IEDM-02 Tech. Dig., pp. 771-774
2. MAX SiGe Technology", IEEE Electron Dev. Lett., vol. 23, no 9, pp. 541-543 (Sept. 2002)
3. J. Böck et al, "Sub 5 ps SiGe Bipolar Technology", IEDM-02 Tech. Dig., pp. 763-766
4. K. Washio et al, "Ultra-High-Speed Scaled-down Self-Aligned SEG SiGe HBTs", IEDM-02 Tech. Dig., pp. 767-770
5. T. Hashimoto et al, "Integration of a 0.13-μm CMOS and a high performance self-aligned SiGe HBT featuring low base resistance", IEDM-02 Tech. Dig., pp. 779-782
6. 2 6-T SRAM Cell", IEDM-02 Tech. Dig., pp. 73-76
7. H. Baudry et al, "High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy", BCTM-01 Tech. Dig., pp. 52-55
8. D. Gloria et al, "Substrate resistance effect on the Fmax parameter of isolated BJT in BlCMOS process", ICMTS-99 Proc., pp. 24-29