Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics

IEEE Microwave and Wireless Components Letters

Volumn 13, Issue 10, 2003, Pages 431-433

  Yang, M Y ^a   Huang, C H ^a   Chin, Albert ^a   Zhu, Chunxiang ^b   Cho, B J ^b   Li, M F ^b   Kwong, Dim Lee ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

Capacitor; Dielectric constant; Frequency dependence; High ; MIM; RF

Indexed keywords

CURRENT DENSITY; LEAKAGE CURRENTS; MIM DEVICES; MOSFET DEVICES; PERMITTIVITY MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; TANTALUM COMPOUNDS; VARIABLE FREQUENCY OSCILLATORS;

HIGH PERMITTIVITY ALUMINUM OXIDE; LEAKAGE CURRENT DENSITY; METAL INSULATOR METAL CAPACITORS; TANTALUM OXIDE DIELECTRICS;

CAPACITORS;

EID: 0242368175     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2003.818532     Document Type: Letter

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