Tantalum nitride thin film resistors for integration into copper metallization based RF-CMOS and BiCMOS technology platforms

2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001

Volumn , Issue , 2001, Pages 71-74

  Henderson, Rashaunda ^a   Zurcher, Peter ^a   Duvallet, Alain ^b   Happ, Chris ^a   Petras, Michael ^a   Raymond, Mark ^a   Remmel, Tom ^a   Roberts, Doug ^a   Steimle, Bob ^a   Straub, Sherry ^c   Sparks, Terry ^b   Tarabbia, Marc ^a   Miller, Mel ^a  

^a Materials and Structures Laboratories   (United States)

^b RF IF Device Laboratory   (United States)

^c Semiconductor Products Sector   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; COPPER; FILM PREPARATION; INTEGRATED CIRCUITS; METALLIZING; MIXED SIGNAL INTEGRATED CIRCUITS; RESISTORS; SILICON; TEMPERATURE; THIN FILMS;

COPPER METALLIZATION; DAMASCENE COPPER; HIGH LINEARITY; METAL THIN FILM; METALLIZATION SYSTEMS; RF PERFORMANCE; TANTALUM NITRIDES; VERY LOW TEMPERATURES;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 2342483214     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2001.942343     Document Type: Conference Paper

References (5)

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4. Motorola, IEEE IEDM Technical Digest, pp.153-156 (2000).
5. Georgia Institute of Technology and Motorola Corporate Manufacturing Research Center, pp. 232-239 (1998).