RFCMOS technology from 0.25μm to 65nm: The state of the art

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2004, Pages 217-224

  Pekarik, J ^a   Greenberg, D ^a   Jagannathan, B ^a   Groves, R ^a   Jones, J R ^a   Singh, R ^a   Chinthakindi, A ^a   Wang, X ^a   Breitwisch, M ^a   Coolbaugh, D ^a   Cottrell, P ^a   Florkey, J ^a   Freeman, G ^a   Krishnasamy, R ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITORS; COSTS; FIELD EFFECT TRANSISTORS; INTERFACES (COMPUTER); MICROPROCESSOR CHIPS; MIM DEVICES; MOS DEVICES; NATURAL FREQUENCIES; OPTICAL INTERCONNECTS; SHORT CIRCUIT CURRENTS; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

DRAIN INDUCED BARRIER LOWERING (DIBL); LOW NOISE AMPLIFIERS (LNA); METAL-INSULATOR-METAL (MIM) CAPACITORS; RF CIRCUITS;

CMOS INTEGRATED CIRCUITS;

EID: 20144388181     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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