SiGe BiCMOS technology for communication products

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2003, Pages 331-334

  Racanelli, Marco ^a   Kempf, Paul ^a  

^a Jazz Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES; TRANSCEIVERS;

QUASI-SELF-ALIGNED DEVICE; SILICON GERMANIDE TRANSISTOR; WIRELESS TRANSCEIVER;

CMOS INTEGRATED CIRCUITS;

EID: 0242527285     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. Racanelli et al., "Ultra high speed SiGe NPN for advanced BiCMOS technology", IEDM Tech Dig., p. 336, Dec. 2001.
2. C. King et al., "Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process", IEDM Tech. Dig., p. 565, Dec. 1999.
3. P. Ye et al., "High performance circuits in 0.18 μm SiGe BiCMOS process for wireless applications", RFIC Symposium, p. 329, Jun. 2002.
4. Pingxi Ma, 2003 RFIC Symposium, in press.
5. Ullas Singh, "A comparison of 0.18 μm SiGe BiCMOS with 0.13 μm CMOS Technologies for High-Speed Mixed-Signal Applications", unpublished.