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Volumn 22, Issue 2, 2001, Pages 56-58

InAlAs/InGaAs HBTs with simultaneously high values of Fτ and Fmax for mixed analog/digital applications

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; DIGITAL INTEGRATED CIRCUITS; FABRICATION; NATURAL FREQUENCIES; SEMICONDUCTING INDIUM;

EID: 0035249918     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.902830     Document Type: Article
Times cited : (17)

References (7)
  • 1
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    • Santa Barbara, CA. June
    • Q. Lee er al.. "Submicron transferred-substrate heterojunction bipolar transistors with greater than 1 THz fmax," in Proc. IEEE Device Research Conf., Santa Barbara, CA. June 1999.
    • (1999) Proc. IEEE Device Research Conf.
    • Lee, Q.1
  • 2
    • 0032639303 scopus 로고    scopus 로고
    • Transferred-substrate HBT's with 254 GHz ft
    • D. Mensa et al., "Transferred-substrate HBT's with 254 GHz ft," Electron. Lett., vol. 35, no. 7, pp. 605-606, 1999.
    • (1999) Electron. Lett. , vol.35 , Issue.7 , pp. 605-606
    • Mensa, D.1
  • 3
    • 0006686675 scopus 로고
    • Propagation delay in high speed silicon bipolar and GaAs HBT digital circuits
    • P. K. Tien, "Propagation delay in high speed silicon bipolar and GaAs HBT digital circuits," Int. J. High Speed Electron., vol. 1, pp. 101-124, 1990.
    • (1990) Int. J. High Speed Electron. , vol.1 , pp. 101-124
    • Tien, P.K.1
  • 4
    • 0030213937 scopus 로고    scopus 로고
    • Design considerations for very high speed Si-bipolar IC's operating up to 50 Gb/s
    • H.-M. Rein and M. Moller, "Design considerations for very high speed Si-bipolar IC's operating up to 50 Gb/s," IEEE J. Solid-State Circuits, vol. 31, pp. 1076-1090, 1996.
    • (1996) IEEE J. Solid-state Circuits , vol.31 , pp. 1076-1090
    • Rein, H.-M.1    Moller, M.2
  • 5
    • 0344210390 scopus 로고    scopus 로고
    • SiGe regenerative frequency divider operating up to 63 GHz
    • J. Mullrich, W. Klein, R. Khlifi, and H.-M. Rein, "SiGe regenerative frequency divider operating up to 63 GHz," Electron. Lett., vol. 35, p. 1730, 1999.
    • (1999) Electron. Lett. , vol.35 , pp. 1730
    • Mullrich, J.1    Klein, W.2    Khlifi, R.3    Rein, H.-M.4
  • 6
    • 84937658108 scopus 로고
    • t) fall off at high current densities
    • T) fall off at high current densities," IRE Trans. Electron. Devices, vol. ED-9, pp. 164-174, 1962.
    • (1962) IRE Trans. Electron. Devices , vol.ED-9 , pp. 164-174
    • Kirk C.T., Jr.1
  • 7
    • 0032626929 scopus 로고    scopus 로고
    • Submicron transferred-substrate heterojunction bipolar transistors
    • Aug.
    • Q. Lee et al., "Submicron transferred-substrate heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 20, pp. 396-398, Aug. 1999.
    • (1999) IEEE Electron Device Lett. , vol.20 , pp. 396-398
    • Lee, Q.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.