A 210-GHz fT SiGe HBT with a non-self-aligned structure

IEEE Electron Device Letters

Volumn 22, Issue 11, 2001, Pages 542-544

  Jeng, S J ^b   Jagannathan, B ^b   Rieh, J S ^a,b   Johnson, J ^c   Schonenberg, K T ^b   Greenberg, D ^b   Stricker, A ^c   Chen, H ^b   Khater, M ^b   Ahlgren, D ^b   Freeman, G ^a,b   Stein, K ^a,b   Subbanna, S ^b  

^a IEEE

^b IBM   (United States)

^c NONE

Author keywords

Bipolar transistors; Germanium; Semiconductor heterojunctions; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIFFUSION; ETCHING; GATES (TRANSISTOR); LITHOGRAPHY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

NON SELF-ALIGNED STRUCTURE; TRANSIENT ENHANCED DIFFUSION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035506260     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.962657     Document Type: Article

References (10)

1. max) HBT and ASIC-compatible CMOS using copper interconnect
2. T SiGe technology
3. transit frequency
4. max for mixed analog/digital applications
5. High performance, high yield InP DHBT production process for 40 Gbps applications
6. T at 1 mA collector current
7. eff CMOS
8. Suppression of boron outdiffusion in SiGe HBT's by carbon incorporation
9. Physical limitations on frequency and power parameters of transistors
10. Bipolar transistors