High frequency noise characteristics of RF MOSFETs in subthreshold region

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2003, Pages 163-166

  To, Kun Hin ^a   Park, Young Bog ^a   Thoma, Rainer ^a   Brown, William ^a   Huang, Margaret W ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; SPURIOUS SIGNAL NOISE;

NOISE PARAMETERS;

MOSFET DEVICES;

EID: 0041589261     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. BSIM4.0.0 MOSFET Model User's Manual
2. MOS Model 11 Level 1101 Unclassified Report
3. A. van der Ziel, Noise in Solid Sate Devices and Circuits. New York: Wiley, 1986