Performance and design considerations for high speed SiGe HBTs of fT/fmax=375GHz/210GHz

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 374-377

  Rieh, Jae Sung ^a   Jagannathan, Basanth ^a   Chen, Huajie ^a   Schonenberg, Kathryn ^a   Jeng, Shwu Jen ^a   Khater, Marwan ^a   Ahlgren, David ^a   Freeman, Greg ^a   Subbanna, Seshadri ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND NETWORKS; CMOS INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CAPACITANCE; ENERGY GAP; GERMANIUM; GERMANIUM ALLOYS; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; MICROELECTRONICS; PHOTONIC BAND GAP; SILICON ALLOYS; TRANSISTORS;

BROADBAND COMMUNICATIONS; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

CMOS TECHNOLOGY; FREQUENCY; GERMANIUM SILICON ALLOY; SILICIDATION; SILICON GERMANIUM;

EID: 0038148529     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

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