RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

IEEE Transactions on Electron Devices

Volumn 51, Issue 6, 2004, Pages 886-894

  Ding, Shi Jin ^a   Hu, Hang ^a   Zhu, Chunxiang ^a   Kim, Sun Jung ^a   Yu, Xiongfei ^a   Li, Ming Fu ^a   Cho, Byung Jin ^a   Chan, Daniel S H ^a   Yu, M B ^b   Rustagi, Subhash C ^b   Chin, Albert ^c   Kwong, Dim Lee ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d The University of Texas at Austin   (United States)

Author keywords

Atomic layer deposit (ALD); HfO2 Al2O3 laminate; Metal insulator metal (MIM) capacitor; Radio frequency (RF); Reliability

Indexed keywords

ALUMINA; CAPACITANCE MEASUREMENT; LAMINATES; MIM DEVICES; RELIABILITY;

LAMINATE CAPACITOR; QUADRATIC VOLTAGE COEFFICIENT;

CAPACITORS;

EID: 2942661891     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.827367     Document Type: Article

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