Over 300 GHz fT and fmax InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base

IEEE Electron Device Letters

Volumn 23, Issue 12, 2002, Pages 694-696

  Ida, Minoru ^a   Kurishima, Kenji ^a   Watanabe, Noriyuki ^a,b  

^a NTT CORPORATION   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

Author keywords

Graded base; Heterojunction bipolar transistor; Indium phosphide

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENT CONTROL; ELECTRIC NETWORK ANALYSIS; EQUIVALENT CIRCUITS; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSMISSION LINE THEORY;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; GRADED BASE; PSEUDOMORPHIC BASE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0037004969     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.806300     Document Type: Letter

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