A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 224-225

  Kuhn, K ^a   Basco, R ^a   Becher, D ^a   Hattendorf, M ^a   Packan, P ^a   Post, I ^a   Vandervoorn, P ^a   Young, I ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC COMMERCE; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERNET; NANOTECHNOLOGY; SILICON COMPOUNDS; TRANSCONDUCTANCE;

CHARGE SHARING EFFECTS; CURRENT RATIO; GATE RESISTANCE; NMOS; SIGE;

MOS DEVICES;

EID: 4544385361     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345492     Document Type: Conference Paper

References (8)

1. 2 6-T SRAM cell," 2002 IEDM Digest, 8-11 Dec. 2002, pg. 73-76.
2. J.S. Rieh et al., "SiGe HBTs with cut-off frequency of 350 GHz" 2002 IEDM Digest, 8-11 Dec. 2002, pg. 771-774.
3. T in a manufacturable technology," IEEE Electron Device Letters, IEEE, Vol. 23 No. 5, May 2002, pg. 258-260.
4. N. Zamdmer et al., "Suitability of scaled SOI CMOS for high frequency analog circuits," in Proc. ESSDERC 2002, to be published.
5. D. R. Greenberg, et al., "Noise performance of a low base resistance 200 GHz SiGe technology," 2002 IEDM Digest, pg. 787-790.
6. F. K. Chai, R. Reuter, T. Baker, D. Zupac, and J. Kirchgessner, "Outstanding noise characteristics of SiGe:C HBT allow flexibility in high-frequency RF design" IEEE RFIC Symposium, 8-10 June 2003, pg. 151-154.
7. C. H. Huang, et al., "The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 μm technology nodes," IEEE RFIC Symposium, 8-10 June 2003, pg. 373-376.
8. D. Greenberg, et al., "Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology" 2001 IEDM Digest, 2-5 Dec. 2001, pg. 22.1.1-22.1.4