QUBiC4G: A fT/fmax=70/100 GHz 0.25 μm low power SiGe-BiCMOS production technology with high quality passives for 12.5 Gb/s optical networking and emerging wireless applications up to 20 GHz

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 201-204

  Deixler, Peter ^a   Colclaser, R ^a   Bower, D ^a   Bell, N ^a   De Boer, W ^a   Szmyd, D ^a   Bardy, S ^a   Wilbanks, W ^a   Barre, P ^a,b   Houdt, M V ^a,b   Paasschens, J C J ^a,c   Veenstra, H ^a,c   Heijden, E V D ^a,c   Donkers, J J T M ^a,c   Slotboom, J W ^a,c  

^a NXP SEMICONDUCTORS   (Netherlands)

^b PNI Caen/Nijmegen   (France)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CAPACITORS; ELECTRIC INDUCTORS; ELECTRIC LINES; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; LITHOGRAPHY; PASSIVE NETWORKS; POLYSILICON;

OPTICAL NETWORKING; WIRELESS APPLICATIONS;

CMOS INTEGRATED CIRCUITS;

EID: 0036437792     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. A. Pruijmboom et al., Proc. BCTM, 1998, p. 120.
2. D. Szmyd et al., Proc. BCTM, 2001, p.60.
3. M. Racanelli et al., Proc. BCTM, 1999, p.125.
4. H. Baudry et al., Proc. BCTM, 2001, p.52.
5. For model descriptions and source code: www.semiconductors.philips.com/Philips Models.
6. P. Deixler et al., Proc. BCTM, 2001, p.30.
7. N.E.B. Cowern et al., MRS Bulletin, vol. 25, 2000, p.39.
8. For info about the TZA2060 switch: www.semiconductors.philips.com/markets/networking.