SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2004, Pages 395-398

  Rieh, J S ^a   Greenberg, D ^b   Khater, M ^a   Schonenberg, K T ^b   Jeng, S J ^a   Pagette, F ^a   Adam, T ^a   Chinthakindi, A ^a   Florkey, J ^a   Jagannathan, B ^a   Johnson, J ^a   Krishnasamy, R ^a   Sanderson, D ^a   Schnabel, C ^a   Smith, P ^a   Stricker, A ^a   Sweeney, S ^a   Vaed, K ^a   Yanagisawa, T ^a   Ahlgren, D ^a   Stein, K ^a   Freeman, G ^a   more..

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

High speed; Millimeter wave; Noise; SiGe heterojunction bipolar transistor

Indexed keywords

EMITTERS; EXTRAPOLATION FREQUENCY; HIGH-SPEED; SIGE HETEROJUNCTION BIPOLAR TRANSISTOR;

BIPOLAR TRANSISTORS; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTROMIGRATION; EXTRAPOLATION; LEAKAGE CURRENTS; MILLIMETER WAVES; OPTIMIZATION; POLYSILICON;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 4444341171     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

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